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| CYStech Electronics Corp. SURFACE MOUNT SWITCHING DIODE Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 1/3 MM4148SM Description The MM4148SM is designed for high-speed switching application in hybrid thick-and thin-film circuits. Absolute Maximum Ratings ( Operating temperature range applies unless otherwise specified ) Characteristics Symbol Reverse Voltage VR Peak Reverse Voltage VRM Rectified Current(Average) Half Wave Rectification with Resistive Load at IO Tamb=25C and f 50Hz IFSM Surge Forward Current at t<1s and Tj=25C Ptot Power Dissipation at Tamb=25C Junction Temperature Tj Storage Temperature Range Ts Value 75 100 150 500 500 200 -65 to +200 Unit V V mA mA mW C C Characteristics ( Tj=25C) Characteristics Forward Voltage at IF=10mA Leakage Current VR=20V VR =75V VR =20V, Tj=150C Reverse Breakdown Voltage tested with 100us Pulses Capacitance at VF= VR =0 Voltage Rise when Switching On Tested with 50mA Forward Pulses Tp=0.1us, Rise Time<30ns, fp=5~100kHz Reverse Recovery Time From IF=-IR=10mA to IRR=-1mA, VR=6V, RL=100 Thermal Resistance, Junction to Ambient Air Rectification Efficiency at f=100MHz, VRF=2V Symbol VF IR V(BR)R Ctot Vfr trr Rth JA v Min 100 0.45 Typ Max 1 25 5 50 4 2.5 4 350 Unit V nA uA uA V pF V ns /W - MM4148SM CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Admissible Repetitive Peak Forward Current vs Pulse Duration 10 Peak Forward Current---IFRM(A) Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 2/3 =0 =.0.1 I =tp/T t IFRM t T 1 =0.5 =0.2 0.1 0.00001 0.0001 0.001 0.01 Pulse Duration---tp(s) 0.1 1 10 Forward Current vs Forward Voltage 1000 10000 Forward Current---IF(mA) 100 10 1 Dynamic Forward Resistance vs Forward Current T j=25 f=1kHz 1000 Tj=25 Dynamic Resistance---Rf() 100 Tj=100 0.1 0.01 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 0.01 0.1 1 10 100 Forward Voltage---VF(V) Forward Current---IF(mA) Admissible Power Dissipation vs Ambient Temperature 600 Amissible power dissipation-Ptot(mW) Relative Capacitance vs Reverse Voltage 1.1 1.05 Relative Capacitance--Ctot(VR)/Ctot(0V) Tj=25 f=1kHz 500 400 300 200 100 0 0 50 100 150 200 250 Ambient Temperature---TA( ) 1 0.95 0.9 0.85 0.8 0 2 4 6 8 10 Reverse Voltage---VR(V) CYStek Product Specification MM4148SM CYStech Electronics Corp. Mini-melf(SOD-80C) Dimension Spec. No. : C329SM Issued Date : 2003.04.09 Revised Date : Page No. : 3/3 Cathode Mark A B D C LL-34 Mini-Melf SOD-80C CYStek package code:SM *:Typical DIM A B Inches Min. Max. 0.0512 0.0591 0.0118 0.0197 Millimeters Min. Max. 1.30 1.50 0.30 0.50 DIM C D Inches Min. Max. 0.0118 0.0197 0.1260 0.1417 Millimeters Min. Max. 0.30 0.50 3.2 3.6 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MM4148SM CYStek Product Specification |
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